CHA7114-99F X Band High Power Amplifier

United Monolithic Semiconductors

Description

CHA7114-99F X Band High Power Amplifier GaAs Monolithic Microwave IC .
The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications.

📥 Download Datasheet

CHA7114-99F Datasheet Preview — Preview of CHA7114-99F PDF

Datasheet Specifications

Part number: CHA7114-99F
Manufacturer: United Monolithic Semiconductors
File Size: 418.08 KB
Datasheet: CHA7114-99F-UnitedMonolithicSemiconductors.pdf
Description: X Band High Power Amplifier

Features

* 0.25µm Power pHEMT Technology
* 8.5
* 11.5GHz Frequency Range
* 8W Output Power @ 4dBcp
* High PAE: > 40% @ 4dBcp
* 20dB nominal Gain
* Quiescent Bias point: Vd = 8V, Id = 2A
* Chip size: 4.41 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) IN 50 45 40 35 30 25

Applications

* This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process:
* The backside of the chip is both RF and DC grounded
* Bond pads and back side are gold plated for compatibility with eutectic d

CHA7114-99F Distributors

📁 Related Datasheet

CHA-20NF CHA-20NM CHA-20NMF CHA-20SF CHA-20SM CHA-20SMF

📌 All Tags

CHA7114-99F Band High Power Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA7114-99F-like datasheet