CHA7114-99F Datasheet - United Monolithic Semiconductors

CHA7114-99F X Band High Power Amplifier

The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * The backside of the chip is bo.

CHA7114-99F Features

* 0.25µm Power pHEMT Technology

* 8.5

* 11.5GHz Frequency Range

* 8W Output Power @ 4dBcp

* High PAE: > 40% @ 4dBcp

* 20dB nominal Gain

* Quiescent Bias point: Vd = 8V, Id = 2A

* Chip size: 4.41 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) IN 50 45 40 35 30 25

CHA7114-99F-UnitedMonolithicSemiconductors.pdf

CHA7114-99F Datasheet Preview — Preview of CHA7114-99F PDF

Datasheet Details

Part number:

CHA7114-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

418.08 KB

Description:

X band high power amplifier.

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CHA7114-99F CHA7114-99F Band High Power Amplifier United Monolithic Semiconductors

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