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CHA7114-99F X Band High Power Amplifier

CHA7114-99F Description

CHA7114-99F X Band High Power Amplifier GaAs Monolithic Microwave IC .
The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications.

CHA7114-99F Features

* 0.25µm Power pHEMT Technology
* 8.5
* 11.5GHz Frequency Range
* 8W Output Power @ 4dBcp
* High PAE: > 40% @ 4dBcp
* 20dB nominal Gain
* Quiescent Bias point: Vd = 8V, Id = 2A
* Chip size: 4.41 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) IN 50 45 40 35 30 25

CHA7114-99F Applications

* This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process:
* The backside of the chip is both RF and DC grounded
* Bond pads and back side are gold plated for compatibility with eutectic d

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Band High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA7114-99F-like datasheet