CHA7114-99F - X Band High Power Amplifier
The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges.
To simplify the assembly process: * The backside of the chip is bo
CHA7114-99F Features
* 0.25µm Power pHEMT Technology
* 8.5
* 11.5GHz Frequency Range
* 8W Output Power @ 4dBcp
* High PAE: > 40% @ 4dBcp
* 20dB nominal Gain
* Quiescent Bias point: Vd = 8V, Id = 2A
* Chip size: 4.41 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) IN 50 45 40 35 30 25
