CHA7114 - X Band High Power Amplifier
www.DataSheet4U.comThe Pout (dBm) & PAE (%) & Gain (dB) CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges.
To simplify the ass
CHA7114 Features
* 0.25µm Power pHEMT Technology 8.5
* 11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent)
