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CHA7114

X Band High Power Amplifier

CHA7114 Features

* 0.25µm Power pHEMT Technology 8.5

* 11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent)

CHA7114 General Description

www.DataSheet4U.comThe Pout (dBm) & PAE (%) & Gain (dB) CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the ass.

CHA7114 Datasheet (316.61 KB)

Preview of CHA7114 PDF

Datasheet Details

Part number:

CHA7114

Manufacturer:

United Monolithic Semiconductors

File Size:

316.61 KB

Description:

X band high power amplifier.

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TAGS

CHA7114 Band High Power Amplifier United Monolithic Semiconductors

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