CHA7114 Datasheet - United Monolithic Semiconductors

CHA7114 X Band High Power Amplifier

www.DataSheet4U.comThe Pout (dBm) & PAE (%) & Gain (dB) CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the ass.

CHA7114 Features

* 0.25µm Power pHEMT Technology 8.5

* 11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent)

CHA7114_UnitedMonolithicSemiconductors.pdf