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CHA7114 X Band High Power Amplifier

CHA7114 Description

CHA7114 X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 .
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CHA7114 Features

* 0.25µm Power pHEMT Technology 8.5
* 11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent)

CHA7114 Applications

* This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process:
* The backside of the chip is both RF and DC grounded
* Bond pads and back side are gold plated for compatibility with e

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Band High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA7114-like datasheet