CHA7114 - X Band High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA7114
Manufacturer	United Monolithic Semiconductors
File Size	316.61 KB
Description	X Band High Power Amplifier
Datasheet	CHA7114_UnitedMonolithicSemiconductors.pdf

CHA7114 Product details

Description

www.DataSheet4U.comThe Pout (dBm) & PAE (%) & Gain (dB) CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications.This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air bridges.To simplify the assembly process: The backside of the chip is both RF and DC grounded Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression

Features

0.25µm Power pHEMT Technology 8.5.
11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41mm x 3.31mm x 0.07mm Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10% Symbol Top Fop P_4dBc G Parameter Operating temperature range Operating frequency range Output power @ 4dBc @ 25° C Small signal gain @ 25° C Min -40 8.5.

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Published: Dec 12, 2008 |