CHA7012 - X-band HBT High Power Amplifier
The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.DataSheet4U.com for X band applications.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge.
A nitride layer protects the transistors and the passive compone
CHA7012 Features
* Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4
