Datasheet Specifications
- Part number
- CHA7012
- Manufacturer
- United Monolithic Semiconductors
- File Size
- 604.20 KB
- Datasheet
- CHA7012_UnitedMonolithicSemiconductors.pdf
- Description
- X-band HBT High Power Amplifier
Description
CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC .
Features
* Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4Applications
* This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -thCHA7012 Distributors
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