CHA7618-99F Datasheet 10w Wide-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA7618-99F 10W Wide-Band High Power Amplifier GaN Monolithic Microwave.

Datasheet Details

Part number	CHA7618-99F
Manufacturer	United Monolithic Semiconductors
File Size	1.17 MB
Description	10W Wide-Band High Power Amplifier
Datasheet	CHA7618-99F-UnitedMonolithicSemiconductors.pdf

The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz.

This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency.

The circuit exhibits a small signal gain of more than 30dB.

5.5-18GHz frequency range.
Linear Gain > 30dB.
40dBm Pout for +20dBm Input Power.
PAE > 20% for +20dBm Input Power.
ID associated current < 3A.
Quiescent Bias : Vd=18V @Idq=0.530A.
Chip size 5.80x3.48x0.07mm VD STG1 STG2 STG3 IN OUT VG CW measurements: Tb. = 25°C, Vd = +18V/ Idq=530mA Pout versus frequency, Pin=20dBm: Gain(dB); Pout(dBm); PAE(%) IDTotal(A) 44 3.5 40 3.0 36 2.5 32 2.0 28 1.5 24 1.0 20 0.5 16 0.0 5 6 7 8 9 10 11 12 13 14.

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