Datasheet Details
| Part number | CHA7618-99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 1.17 MB |
| Description | 10W Wide-Band High Power Amplifier |
| Datasheet |
 CHA7618-99F Datasheet
|
|
|
General Description
The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz.
This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency.
The circuit exhibits a small signal gain of more than 30dB.
Key Features
- 5.5-18GHz frequency range.
- Linear Gain > 30dB.
- 40dBm Pout for +20dBm Input Power.
- PAE > 20% for +20dBm Input Power.
- ID associated current < 3A.
- Quiescent Bias : Vd=18V @Idq=0.530A.
- Chip size 5.80x3.48x0.07mm VD STG1 STG2 STG3 IN OUT VG CW measurements: Tb. = 25°C, Vd = +18V/ Idq=530mA Pout versus frequency, Pin=20dBm: Gain(dB); Pout(dBm); PAE(%) IDTotal(A) 44 3.5 40 3.0 36 2.5 32 2.0 28 1.5 24 1.0 20 0.5 16 0.0 5 6 7 8 9 10 11 12 13 14.