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CHA7618-99F - 10W Wide-Band High Power Amplifier

Datasheet Summary

Description

The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz.

This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency.

The circuit exhibits a small signal gain of more than 30dB.

Features

  • 5.5-18GHz frequency range.
  • Linear Gain > 30dB.
  • 40dBm Pout for +20dBm Input Power.
  • PAE > 20% for +20dBm Input Power.
  • ID associated current < 3A.
  • Quiescent Bias : Vd=18V @Idq=0.530A.
  • Chip size 5.80x3.48x0.07mm VD STG1 STG2 STG3 IN OUT VG CW measurements: Tb. = 25°C, Vd = +18V/ Idq=530mA Pout versus frequency, Pin=20dBm: Gain(dB); Pout(dBm); PAE(%) IDTotal(A) 44 3.5 40 3.0 36 2.5 32 2.0 28 1.5 24 1.0 20 0.5 16 0.0 5 6 7 8 9 10 11 12 13 14.

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Datasheet Details

Part number CHA7618-99F
Manufacturer United Monolithic Semiconductors
File Size 1.17 MB
Description 10W Wide-Band High Power Amplifier
Datasheet download datasheet CHA7618-99F Datasheet
Additional preview pages of the CHA7618-99F datasheet.

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Full PDF Text Transcription

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CHA7618-99F 10W Wide-Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The circuit exhibits a small signal gain of more than 30dB. The overall power supply is of 18V/0.530A (quiescent current). This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gate length GaN HEMT process and is available as a bare die. Main Features ■ 5.
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