CHA7618-99F Datasheet | United Monolithic Semiconductors

Description The CHA7618-99F is a three-stage Ga N High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The circuit exhibits a small signal gain of more than 30d B. The overall power supply is of 18V/0.530A (quiescent current). This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gate length Ga N HEMT process and is available as a bare die. Main Features - 5.5-18GHz frequency range - Linear Gain > 30d B - 40d Bm Pout for +20d Bm Input Power - PAE > 20% for +20d Bm Input Power - ID associated current < 3A - Quiescent Bias : Vd=18V @Idq=0.530A - Chip size 5.80x3.48x0.07mm STG1 STG2 STG3 CW measurements: Tb.= 25°C, Vd = +18V/ Idq=530m A Pout versus frequency, Pin=20d Bm: Gain(d B); Pout(d Bm); PAE(%) IDTotal(A) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Frequency(GHz) 'Pout' 'Gain' 'PAE'...