CHA7010 Datasheet, Amplifier, United Monolithic Semiconductors

CHA7010 Features

• Amplifier 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensate

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CHA7010

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United Monolithic Semiconductors

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📄 Datasheet

Description:

X-band gainp hbt high power amplifier. The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a

CHA7010 Application

• Applications This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer pro

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CHA7010

United Monolithic Semiconductors

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