CHA7010 X-band GaInP HBT High Power Amplifier

United Monolithic Semiconductors

Description

CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC .
The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.

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Datasheet Specifications

Part number: CHA7010
Manufacturer: United Monolithic Semiconductors
File Size: 264.28 KB
Datasheet: CHA7010_UnitedMonolithicSemiconductors.pdf
Description: X-band GaInP HBT High Power Amplifier

Features

* 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensated Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Main Char

Applications

* This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process:

CHA7010 Distributors

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CHA7010 X-band GaInP HBT High Power Amplifier United Monolithic Semiconductors

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