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CHA7115-99F GaAs Monolithic Microwave

CHA7115-99F Description

CHA7115-99F RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC .
Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications.

CHA7115-99F Features

*  0.25µm Power pHEMT Technology  Frequency band: 8.5
* 11.5GHz  Output power : 39dBm @ 4dBcomp  High linear gain: > 27dB  High PAE : 37% @ 4dBcomp  Quiescent bias point: Vd=8V, Id=2.2A  Chip size: 4.59 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) 44 42 40 Pout @ 4dBc 38 36 34 32

CHA7115-99F Applications

* Vg2 Vd2 Vg1 The HPA provides typically 8W output power associated to 36% power added efficiency at IN OUT 4dBcomp and a high robustness on mismatch load. Vd1 Vd2 This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges. Vg3 V

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GaAs Monolithic Microwave United Monolithic Semiconductors
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