CHA7215-99F Datasheet - United Monolithic Semiconductors

CHA7215-99F X-band High Power Amplifier

The CHA7215-99F is a monolithic three- stage GaAs high power amplifier designed for X band applications. * The HPA provides typically 9W output power IN associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load. This device is manufactured using 0.25 µm P.

CHA7215-99F Features

*  0.25 µm Power pHEMT Technology  Frequency band: 8.5

* 11.5GHz  Output power: 39.5dBm at saturation  High linear gain: 28dB  Power added efficiency: 34% @4dBc  Quiescent bias point: Vd=8V, Id=2.3A  Chip size: 5 x 3.31 x 0.07mm Output Power (dBm) Output Power versus Frequency @Pin=19

CHA7215-99F-UnitedMonolithicSemiconductors.pdf