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CHA7215-99F X-band High Power Amplifier

CHA7215-99F Description

CHA7215-99F X-band High Power Amplifier GaAs Monolithic Microwave IC .
The CHA7215-99F is a monolithic three- stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W outp.

CHA7215-99F Features

*  0.25 µm Power pHEMT Technology  Frequency band: 8.5
* 11.5GHz  Output power: 39.5dBm at saturation  High linear gain: 28dB  Power added efficiency: 34% @4dBc  Quiescent bias point: Vd=8V, Id=2.3A  Chip size: 5 x 3.31 x 0.07mm Output Power (dBm) Output Power versus Frequency @Pin=19

CHA7215-99F Applications

* The HPA provides typically 9W output power IN associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load. This device is manufactured using 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. VG1R VD1

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X-band High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA7215-99F-like datasheet