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CHA7618-99F

10W Wide-Band High Power Amplifier

CHA7618-99F Features

* 5.5-18GHz frequency range

* Linear Gain > 30dB

* 40dBm Pout for +20dBm Input Power

* PAE > 20% for +20dBm Input Power

* ID associated current < 3A

* Quiescent Bias : Vd=18V @Idq=0.530A

* Chip size 5.80x3.48x0.07mm VD STG1 STG2 STG3 IN OUT VG CW measurements: Tb.

CHA7618-99F General Description

The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The circuit exhibits a small signal gain of more than 30dB. The overall power supply is of 18V/0.530A (quiescent cu.

CHA7618-99F Datasheet (1.17 MB)

Preview of CHA7618-99F PDF

Datasheet Details

Part number:

CHA7618-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.17 MB

Description:

10w wide-band high power amplifier.

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TAGS

CHA7618-99F 10W Wide-Band High Power Amplifier United Monolithic Semiconductors

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