CHA7115-99F Datasheet GaAs Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

CHA7115-99F gaas monolithic microwave by United Monolithic Semiconductors - Datasheet Preview

Datasheet Details

Part number	CHA7115-99F
Manufacturer	United Monolithic Semiconductors
File Size	112.62 KB
Description	GaAs Monolithic Microwave
Download	CHA7115-99F Download (PDF)

General Description

Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications.

Vg2 Vd2 Vg1 The HPA provides typically 8W output power associated to 36% power added efficiency at IN OUT 4dBcomp and a high robustness on mismatch load.

Vd1 Vd2 This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges.

Overview

CHA7115-99F RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave.

Key Features

 0.25µm Power pHEMT Technology  Frequency band: 8.5.
11.5GHz  Output power : 39dBm @ 4dBcomp  High linear gain: > 27dB  High PAE : 37% @ 4dBcomp  Quiescent bias point: Vd=8V, Id=2.2A  Chip size: 4.59 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) 44 42 40 Pout @ 4dBc 38 36 34 32 PAE @ 4dBc 30 28 26 24 Pulse : 25µs 10% 22 8 8.5 9 9.5 10 10.5 Frequency (GHz) Linear Gain 11 11.5 12 Main Characteristics Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10.

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