CHA8012-99F Key Features
- Broadband performances: 5.2-6GHz
- High output power: +41.5dBm
- High PAE: 43%
- Linear Gain: 22dB
- DC bias: Vd=8Volt @Id=2.1A
- Chip size 5.61x4.51x0.07mm
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- Part: CHA8012-99F
- Description: C Band High Power Amplifier
- Manufacturer: United Monolithic Semiconductors
- Size: 760.02 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA8054-99F | 20W X-Band High Power Amplifier |
| CHA8100 | X-band HBT High Power Amplifier |
| CHA8100-99F | X-band HBT High Power Amplifier |
| CHA8212-99F | 25W X-Band High Power Amplifier |
| CHA8252-99F | 10W K-Band High Power Amplifier |