Datasheet Details
| Part number | CHA8012-99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 760.02 KB |
| Description | C Band High Power Amplifier |
| Datasheet |
 CHA8012-99F Datasheet
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General Description
GaAs High Power Amplifier (HPA) designed for C band applications.
compression.
The small signal gain is 22dB.
Key Features
- Broadband performances: 5.2-6GHz.
- High output power: +41.5dBm.
- High PAE: 43%.
- Linear Gain: 22dB.
- DC bias: Vd=8Volt @Id=2.1A.
- Chip size 5.61x4.51x0.07mm Main Electrical Characteristics Tamb. = +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs) Symbol Parameter Min Typ Max Unit Freq Frequency range 5.2 6.0 GHz Gain Linear Gain 22 dB P_3dBcomp Output power @ 3dB compression 41.5 dBm PAE_3dB Power Added Efficiency @ 3dB comp. 4.