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CHA8352-99F 20W Ku-Band High Power Amplifier

CHA8352-99F Description

CHA8352-99F 20W Ku-Band High Power Amplifier GaN Monolithic Microwave IC .
The CHA8352-99F is a two-stage GaN High V+ Power Amplifier in the frequency band 10.

CHA8352-99F Features

* 10.7-12.75 GHz frequency range
* Linear Gain is 25 dB
* 43dBm Pout for +23dBm input power
* Associated PAE is more than 45% for +23dBm input power
* Associated Id is 2.2A for +23dBm input power
* DC bias: Vd=20Volts @Idq=0.5A
* Chip size 5.3x3.5x0.07mm Pout @7 dB compr

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20W Ku-Band High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA8352-99F-like datasheet