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CHA8352-99F

20W Ku-Band High Power Amplifier

CHA8352-99F Features

* 10.7-12.75 GHz frequency range

* Linear Gain is 25 dB

* 43dBm Pout for +23dBm input power

* Associated PAE is more than 45% for +23dBm input power

* Associated Id is 2.2A for +23dBm input power

* DC bias: Vd=20Volts @Idq=0.5A

* Chip size 5.3x3.5x0.07mm Pout @7 dB compr

CHA8352-99F General Description

The CHA8352-99F is a two-stage GaN High V+ Power Amplifier in the frequency band 10.7- 12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0.5A (quiescent curr.

CHA8352-99F Datasheet (1.75 MB)

Preview of CHA8352-99F PDF

Datasheet Details

Part number:

CHA8352-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.75 MB

Description:

20w ku-band high power amplifier.

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TAGS

CHA8352-99F 20W Ku-Band High Power Amplifier United Monolithic Semiconductors

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