CHA8212-99F Datasheet - United Monolithic Semiconductors

CHA8212-99F 25W X-Band High Power Amplifier

The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.84A (quiescent cur.

CHA8212-99F Features

* 8.5-11.5 GHz frequency range

* Linear Gain is 34 dB

* 44dBm Pout for +20dBm input power

* Associated PAE is 36% for +20dBm input power

* Associated Id is 2.5A for +20dBm input power

* DC bias: Vd=28Volts @Idq=0.84A

* Chip size 5.63x4.23x0.1mm Pout @8 dB compression Pae

CHA8212-99F-UnitedMonolithicSemiconductors.pdf

CHA8212-99F Datasheet Preview — Preview of CHA8212-99F PDF

Datasheet Details

Part number:

CHA8212-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

756.84 KB

Description:

25w x-band high power amplifier.

CHA8212-99F Distributor

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CHA8212-99F CHA8212-99F 25W X-Band High Power Amplifier United Monolithic Semiconductors