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CHA8212-99F 25W X-Band High Power Amplifier

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Description

CHA8212-99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC .
The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.

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Features

* 8.5-11.5 GHz frequency range
* Linear Gain is 34 dB
* 44dBm Pout for +20dBm input power
* Associated PAE is 36% for +20dBm input power
* Associated Id is 2.5A for +20dBm input power
* DC bias: Vd=28Volts @Idq=0.84A
* Chip size 5.63x4.23x0.1mm Pout @8 dB compression Pae

CHA8212-99F Distributors

📁 Related Datasheet

CHA-20NF CHA-20NM CHA-20NMF CHA-20SF CHA-20SM CHA-20SMF

📌 All Tags

CHA8212-99F 25W X-Band High Power Amplifier United Monolithic Semiconductors
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