CHA8262-99F Datasheet 27.5 - 31.5 Ghz 12w Hpa

Manufacturer: United Monolithic Semiconductors

Overview: CHA8262-99F 27.5 - 31.5 GHz 12W HPA GaN Monolithic Microwave IC bare.

Datasheet Details

Part number	CHA8262-99F
Manufacturer	United Monolithic Semiconductors
File Size	1.79 MB
Description	27.5 - 31.5 GHz 12W HPA
Datasheet	CHA8262-99F-UnitedMonolithicSemiconductors.pdf

The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.

It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation.

The circuit is manufactured on a 0.15µm gate length GaNon-SiC HEMT process and is available in bare die form.

27.5.
31.5GHz Frequency Range.
Linear Gain is 24dB.
Pout = 41dBm @ Pin = 20.5dBm.
PAE = 25% @ Psat.
DC bias: Vd=20V @ Idq=280mA.
ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.5dBm, Tcase = 25°C Main Electrical Characteristics Tcase = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated Output Power PAE Power Added Efficiency Idq Total quiescent bias drain current Min Typ Max Unit 27.5 31.5 GHz 24 dB 41.

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