CHA8262-99F Description
The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth. It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaNon-SiC HEMT process and is available in bare die form.
CHA8262-99F Key Features
- 31.5GHz Frequency Range
- Linear Gain is 24dB
- Pout = 41dBm @ Pin = 20.5dBm
- PAE = 25% @ Psat
- DC bias: Vd=20V @ Idq=280mA
- ACPR > 26dBc @ Pout = 39dBm
- 15 Sep 23
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE