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CHA8262-99F - 27.5 - 31.5 GHz 12W HPA

General Description

The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.

It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation.

Key Features

  • 27.5.
  • 31.5GHz Frequency Range.
  • Linear Gain is 24dB.
  • Pout = 41dBm @ Pin = 20.5dBm.
  • PAE = 25% @ Psat.
  • DC bias: Vd=20V @ Idq=280mA.
  • ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.5dBm, Tcase = 25°C Main Electrical Characteristics Tcase = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated Output Power PAE Power Added Efficiency Idq Total quiescent bias drain current Min Typ Max Unit 27.5 31.5 GHz 24 dB 41.

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Datasheet Details

Part number CHA8262-99F
Manufacturer United Monolithic Semiconductors
File Size 1.79 MB
Description 27.5 - 31.5 GHz 12W HPA
Datasheet download datasheet CHA8262-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8262-99F 27.5 - 31.5 GHz 12W HPA GaN Monolithic Microwave IC bare die Description The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth. It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaNon-SiC HEMT process and is available in bare die form. It is well suited for SatCom uplink and 5G communication applications. Main Features ■ 27.5 – 31.5GHz Frequency Range ■ Linear Gain is 24dB ■ Pout = 41dBm @ Pin = 20.5dBm ■ PAE = 25% @ Psat ■ DC bias: Vd=20V @ Idq=280mA ■ ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.