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CHA8054-99F
20W X-Band High Power Amplifier
GaN Monolithic Microwave IC
Description
V+
The CHA8054-99F is a two stage High
Power Amplifier operating between 7.7 and
8.6GHz and typically providing 20W of
saturated output power and 50% of Power
Added Efficiency.
In
Out
It is designed for a wide range of
STG1 STG2
applications, from space, military to
commercial communication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
V-
It is available in chip form.
Main Features
■ Frequency range: 7.7-8.6GHz ■ High output power: 23W ■ High PAE: 50% ■ Linear Gain: 27dB ■ DC bias: Vd=28Volt @ Idq=0.9A ■ Chip size 5.14x4.22x0.
CHA8054-99F Datasheet
