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CHA8054-99F - 20W X-Band High Power Amplifier

General Description

Added Efficiency.

Key Features

  • Frequency range: 7.7-8.6GHz.
  • High output power: 23W.
  • High PAE: 50%.
  • Linear Gain: 27dB.
  • DC bias: Vd=28Volt @ Idq=0.9A.
  • Chip size 5.14x4.22x0.1mm.
  • Available in bare die Gp (dB), PAE (%) & Pout (dBm) 60 55 50 45 40 35 30 25 20 15 10 7.5 Associated Gain Pout 7.75 8 8.25 8.5 Frequency (GHz) PAE 8.75 9 Main Electrical Characteristics Vd = +28V, Idq = 900mA, Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power PAE A.

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Datasheet Details

Part number CHA8054-99F
Manufacturer United Monolithic Semiconductors
File Size 584.87 KB
Description 20W X-Band High Power Amplifier
Datasheet download datasheet CHA8054-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8054-99F 20W X-Band High Power Amplifier GaN Monolithic Microwave IC Description V+ The CHA8054-99F is a two stage High Power Amplifier operating between 7.7 and 8.6GHz and typically providing 20W of saturated output power and 50% of Power Added Efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from space, military to commercial communication systems. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. V- It is available in chip form. Main Features ■ Frequency range: 7.7-8.6GHz ■ High output power: 23W ■ High PAE: 50% ■ Linear Gain: 27dB ■ DC bias: Vd=28Volt @ Idq=0.9A ■ Chip size 5.14x4.22x0.