Datasheet4U Logo Datasheet4U.com

CHA8054-99F Datasheet 20w X-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8054-99F 20W X-Band High Power Amplifier GaN Monolithic Microwave.

General Description

V+ The CHA8054-99F is a two stage High Power Amplifier operating between 7.7 and 8.6GHz and typically providing 20W of saturated output power and 50% of Power Added Efficiency.

In Out It is designed for a wide range of STG1 STG2 applications, from space, military to mercial munication systems.

The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Frequency range: 7.7-8.6GHz.
  • High output power: 23W.
  • High PAE: 50%.
  • Linear Gain: 27dB.
  • DC bias: Vd=28Volt @ Idq=0.9A.
  • Chip size 5.14x4.22x0.1mm.
  • Available in bare die Gp (dB), PAE (%) & Pout (dBm) 60 55 50 45 40 35 30 25 20 15 10 7.5 Associated Gain Pout 7.75 8 8.25 8.5 Frequency (GHz) PAE 8.75 9 Main Electrical Characteristics Vd = +28V, Idq = 900mA, Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power PAE A.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA8012-99F C Band High Power Amplifier
CHA8100 X-band HBT High Power Amplifier
CHA8100-99F X-band HBT High Power Amplifier
CHA8212-99F 25W X-Band High Power Amplifier
CHA8252-99F 10W K-Band High Power Amplifier
CHA8262-99F 27.5 - 31.5 GHz 12W HPA
CHA8352-99F 20W Ku-Band High Power Amplifier
CHA8610-99F 15W X Band High Power Amplifier
CHA8611-99F 18W X-Band High Power Amplifier
CHA8710-QDB 25W X-Band High Power Amplifier

CHA8054-99F Distributor