CHA8100 Datasheet X-band Hbt High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8100 RoHS PLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA8100
Manufacturer	United Monolithic Semiconductors
File Size	251.03 KB
Description	X-band HBT High Power Amplifier
Datasheet	CHA8100-UnitedMonolithicSemiconductors.pdf

The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications.

The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output.

Moreover it includes: • an analogue biasing circuit that makes it less sensitive to spread and chip environment.

11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.

Part Number	Description
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