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CHA8012-99F - C Band High Power Amplifier

Datasheet Summary

Description

GaAs High Power Amplifier (HPA) designed for C band applications.

compression.

The small signal gain is 22dB.

Features

  • Broadband performances: 5.2-6GHz.
  • High output power: +41.5dBm.
  • High PAE: 43%.
  • Linear Gain: 22dB.
  • DC bias: Vd=8Volt @Id=2.1A.
  • Chip size 5.61x4.51x0.07mm Main Electrical Characteristics Tamb. = +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs) Symbol Parameter Min Typ Max Unit Freq Frequency range 5.2 6.0 GHz Gain Linear Gain 22 dB P_3dBcomp Output power @ 3dB compression 41.5 dBm PAE_3dB Power Added Efficiency @ 3dB comp. 4.

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Datasheet Details

Part number CHA8012-99F
Manufacturer United Monolithic Semiconductors
File Size 760.02 KB
Description C Band High Power Amplifier
Datasheet download datasheet CHA8012-99F Datasheet
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Full PDF Text Transcription

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CHA8012-99F C Band High Power Amplifier GaAs Monolithic Microwave IC Description CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides V+ typically 12W of output power on the 5.2 to 6.0GHz frequency band associated with 43% of power added efficiency at 3dB gain compression. The small signal gain is 22dB. The overall power supply is of 8V/2.1A. In Out The circuit is dedicated to defense and space STG1 STG2 applications and is also well suited for a wide range of microwave and millimeter wave applications and systems. This device is manufactured using 0.25µm Power pHEMT process, including via holes through the substrate and air bridges. It is V- available in chip form.
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