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CHA8610-99F - 15W X Band High Power Amplifier

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Datasheet Details

Part number CHA8610-99F
Manufacturer United Monolithic Semiconductors
File Size 538.40 KB
Description 15W X Band High Power Amplifier
Datasheet download datasheet CHA8610-99F Datasheet

General Description

V+ The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 15W of saturated output power and 40% of Power Added Efficiency.

It is designed for a wide range of In Out applications, from military to commercial STG1 STG2 communication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Overview

CHA8610-99F 15W X Band High Power Amplifier GaN Monolithic Microwave.

Key Features

  • Frequency range: 8.5-11GHz.
  • High output power: 15W.
  • High PAE: 40%.
  • Linear Gain: 24dB.
  • DC bias: Vd=30Volt @Id=0.68A.
  • Chip size 5.08x2.75x0.1mm.
  • Available in bare die 45 50 44 45 43 40 Output power (dBm) 42 35 41 30 40 Pout @ Pin=23dBm 25 39 PAE @ Pin=23dBm 20 38 15 37 10 36 5 35 0 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Pout and PAE versus frequency for Pulsed mode Power added efficiency (%) Main Electrical Characteristics (Pul.

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