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CHA8610-99F
15W X Band High Power Amplifier
GaN Monolithic Microwave IC
Description
V+
The CHA8610-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 15W of
saturated output power and 40% of Power
Added Efficiency.
It is designed for a wide range of
In
Out
applications, from military to commercial
STG1 STG2
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
V-
Main Features
■ Frequency range: 8.5-11GHz ■ High output power: 15W ■ High PAE: 40% ■ Linear Gain: 24dB ■ DC bias: Vd=30Volt @Id=0.68A ■ Chip size 5.08x2.75x0.
CHA8610-99F Datasheet
