CHA8611-99F
CHA8611-99F is 18W X-Band High Power Amplifier manufactured by United Monolithic Semiconductors.
Description
V+
The CHA8611-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 18W of saturated output power and 43% of power added efficiency.
In
Out
It is designed for a wide range of
STG1 STG2 applications, from military to mercial munication systems.
The circuit is manufactured with a Ga N
HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
V-
It is available in chip form.
Main Features
- Frequency range: 8.5-11GHz
- High output power: 18W
- High PAE: 43%
- Linear Gain: 24d B
- DC bias: Vd=25Volt @ Idq=0.8A
- Chip size 4.36x2.57x0.1mm
- Available in bare die
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Pout Output Power
PAE Associated Power Added Efficiency
Min Typ Max Unit
11 GHz
24 d B
%
Ref. DSCHA86110301
- 27 Oct 20
1/26
Specifications subject to change without notice
United Monolithic Semiconductors...
