CHA8352-99F Datasheet | United Monolithic Semiconductors

Description The CHA8352-99F is a two-stage Ga N High V+ Power Amplifier in the frequency band 10.7- 12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25d B. The overall power supply is of 20V/0.5A (quiescent current). In Out This circuit is a very versatile amplifier for STG1 STG2 high performance systems. The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gate length Ga N on Si C HEMT process and is available as a bare die. V- Main Features - 10.7-12.75 GHz frequency range - Linear Gain is 25 d B - 43d Bm Pout for +23d Bm input power - Associated PAE is more than 45% for +23d Bm input power - Associated Id is 2.2A for +23d Bm input power - DC bias: Vd=20Volts @Idq=0.5A - Chip size 5.3x3.5x0.07mm Pout @7 d B pression PAE @7 d B pression Main Electrical Characteristics Tb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=23 d Bm) Pout Output Power (Pin=23 d Bm) Min Typ Max Unit 12.75 GHz 25 d B % 43 d Bm Ref. : DSCHA83521330 - 26 Nov...