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CHA8352-99F - 20W Ku-Band High Power Amplifier

General Description

12.75GHz.

Added Efficiency.

exhibits more than 25dB.

Key Features

  • 10.7-12.75 GHz frequency range.
  • Linear Gain is 25 dB.
  • 43dBm Pout for +23dBm input power.
  • Associated PAE is more than 45% for +23dBm input power.
  • Associated Id is 2.2A for +23dBm input power.
  • DC bias: Vd=20Volts @Idq=0.5A.
  • Chip size 5.3x3.5x0.07mm Pout @7 dB compression PAE @7 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=23 dBm) Pout Output Power (Pin=23.

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Datasheet Details

Part number CHA8352-99F
Manufacturer United Monolithic Semiconductors
File Size 1.75 MB
Description 20W Ku-Band High Power Amplifier
Datasheet download datasheet CHA8352-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8352-99F 20W Ku-Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8352-99F is a two-stage GaN High V+ Power Amplifier in the frequency band 10.7- 12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0.5A (quiescent current). In Out This circuit is a very versatile amplifier for STG1 STG2 high performance systems. The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die. V- Main Features ■ 10.7-12.