• Part: CHA8352-99F
  • Manufacturer: United Monolithic Semiconductors
  • Size: 1.75 MB
Download CHA8352-99F Datasheet PDF
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CHA8352-99F Description

The CHA8352-99F is a two-stage GaN High V+ Power Amplifier in the frequency band 10.7- 12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB.

CHA8352-99F Key Features

  • 10.7-12.75 GHz frequency range
  • Linear Gain is 25 dB
  • 43dBm Pout for +23dBm input power
  • Associated PAE is more than 45% for +23dBm input power
  • Associated Id is 2.2A for +23dBm input power
  • DC bias: Vd=20Volts @Idq=0.5A
  • Chip size 5.3x3.5x0.07mm
  • 26 Nov 21
  • Parc Mosaic
  • 10, Avenue du Québec