CHA8352-99F Datasheet 20w Ku-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8352-99F 20W Ku-Band High Power Amplifier GaN Monolithic Microwave.

Datasheet Details

Part number	CHA8352-99F
Manufacturer	United Monolithic Semiconductors
File Size	1.75 MB
Description	20W Ku-Band High Power Amplifier
Datasheet	CHA8352-99F-UnitedMonolithicSemiconductors.pdf

The CHA8352-99F is a two-stage GaN High V+ Power Amplifier in the frequency band 10.7- 12.75GHz.

This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency.

The small signal gain exhibits more than 25dB.

10.7-12.75 GHz frequency range.
Linear Gain is 25 dB.
43dBm Pout for +23dBm input power.
Associated PAE is more than 45% for +23dBm input power.
Associated Id is 2.2A for +23dBm input power.
DC bias: Vd=20Volts @Idq=0.5A.
Chip size 5.3x3.5x0.07mm Pout @7 dB compression PAE @7 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=23 dBm) Pout Output Power (Pin=23.

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