CHA8100-99F X-band HBT High Power Amplifier

United Monolithic Semiconductors

Description

CHA8100-99F X-band HBT High Power Amplifier GaAs Monolithic Microwave IC .
The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications.

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Datasheet Specifications

Part number: CHA8100-99F
Manufacturer: United Monolithic Semiconductors
File Size: 409.43 KB
Datasheet: CHA8100-99F-UnitedMonolithicSemiconductors.pdf
Description: X-band HBT High Power Amplifier

Features

* 11W output power in pulse mode
* High gain: > 18dB @ 10GHz
* High PAE: 40% @ 10GHz
* Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit
* Chip size: 4.9 x 3.68 x 0.1mm3 Main Electrical Characteristics Tamb. = +25°C Vc=9V, Ic

Applications

* The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:
* an analogue biasing circuit that makes it less sensitive to spread and chip environment.
* an integrated TTL interface that enables to switch the HPA w

CHA8100-99F Distributors

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CHA8100-99F X-band HBT High Power Amplifier United Monolithic Semiconductors

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