CHA8100-99F Datasheet (United Monolithic Semiconductors)

CHA8100-99F, X-band HBT High Power Amplifier

The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications.

The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output.

Moreover it includes: * an analogue biasing circuit that makes it less sensitiv

CHA8100-99F Features

* 11W output power in pulse mode

* High gain: > 18dB @ 10GHz

* High PAE: 40% @ 10GHz

* Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit

* Chip size: 4.9 x 3.68 x 0.1mm3 Main Electrical Characteristics Tamb.= +25°C Vc=9V, Ic