Part number:
CHA8100-99F
Manufacturer:
United Monolithic Semiconductors
File Size:
409.43 KB
Description:
X-band hbt high power amplifier.
CHA8100-99F-UnitedMonolithicSemiconductors.pdf
Datasheet Details
Part number:
CHA8100-99F
Manufacturer:
United Monolithic Semiconductors
File Size:
409.43 KB
Description:
X-band hbt high power amplifier.
CHA8100-99F, X-band HBT High Power Amplifier
The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications.
The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output.
Moreover it includes: * an analogue biasing circuit that makes it less sensitiv
CHA8100-99F Features
* 11W output power in pulse mode
* High gain: > 18dB @ 10GHz
* High PAE: 40% @ 10GHz
* Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit
* Chip size: 4.9 x 3.68 x 0.1mm3 Main Electrical Characteristics Tamb.= +25°C Vc=9V, Ic
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