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CHA8100-99F Datasheet - United Monolithic Semiconductors

CHA8100-99F X-band HBT High Power Amplifier

The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes: * an analogue biasing circuit that makes it less sensitiv.

CHA8100-99F Features

* 11W output power in pulse mode

* High gain: > 18dB @ 10GHz

* High PAE: 40% @ 10GHz

* Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit

* Chip size: 4.9 x 3.68 x 0.1mm3 Main Electrical Characteristics Tamb.= +25°C Vc=9V, Ic

CHA8100-99F-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHA8100-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

409.43 KB

Description:

X-band hbt high power amplifier.

CHA8100-99F Distributor

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CHA8100-99F CHA8100-99F X-band HBT High Power Amplifier United Monolithic Semiconductors