Datasheet4U Logo Datasheet4U.com

CHA8100

X-band HBT High Power Amplifier

CHA8100 Features

* 11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.

CHA8100 General Description

The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:

* an analogue biasing circuit that makes it less sensitiv.

CHA8100 Datasheet (251.03 KB)

Preview of CHA8100 PDF

Datasheet Details

Part number:

CHA8100

Manufacturer:

United Monolithic Semiconductors

File Size:

251.03 KB

Description:

X-band hbt high power amplifier.

📁 Related Datasheet

CHA8100-99F X-band HBT High Power Amplifier (United Monolithic Semiconductors)

CHA8012-99F C Band High Power Amplifier (United Monolithic Semiconductors)

CHA8054-99F 20W X-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8212-99F 25W X-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8252-99F 10W K-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8262-99F 27.5 - 31.5 GHz 12W HPA (United Monolithic Semiconductors)

CHA8352-99F 20W Ku-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8610-99F 15W X Band High Power Amplifier (United Monolithic Semiconductors)

CHA8611-99F 18W X-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8710-QDB 25W X-Band High Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA8100 X-band HBT High Power Amplifier United Monolithic Semiconductors

Image Gallery

CHA8100 Datasheet Preview Page 2 CHA8100 Datasheet Preview Page 3

CHA8100 Distributor