CHA8100 Datasheet, Amplifier, United Monolithic Semiconductors

CHA8100 Features

  • Amplifier 11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Ch

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CHA8100

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United Monolithic Semiconductors

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📄 Datasheet

Description:

X-band hbt high power amplifier. The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W outpu

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CHA8100 Application

  • Applications The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includ

TAGS

CHA8100
X-band
HBT
High
Power
Amplifier
United Monolithic Semiconductors

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Stock and price

part
United Monolithic Semiconductors
MMW POWER AMPLIFIER
Richardson RFPD
CHA8100-99F
0 In Stock
Qty : 25 units
Unit Price : $474.94
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