CHA8100 X-band HBT High Power Amplifier

United Monolithic Semiconductors

Description

CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC .
The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications.

📥 Download Datasheet

CHA8100 Datasheet Preview — Preview of CHA8100 PDF

Datasheet Specifications

Part number: CHA8100
Manufacturer: United Monolithic Semiconductors
File Size: 251.03 KB
Datasheet: CHA8100-UnitedMonolithicSemiconductors.pdf
Description: X-band HBT High Power Amplifier

Features

* 11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.

Applications

* The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:
* an analogue biasing circuit that makes it less sensitive to spread and chip environment.
* an integrated TTL interface that enables to switch t

CHA8100 Distributors

📁 Related Datasheet

CHA-20NF CHA-20NM CHA-20NMF CHA-20SF CHA-20SM CHA-20SMF

📌 All Tags

CHA8100 X-band HBT High Power Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA8100-like datasheet