CHA8012-99F C Band High Power Amplifier

United Monolithic Semiconductors

Description

CHA8012-99F C Band High Power Amplifier GaAs Monolithic Microwave IC .
CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications.

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Datasheet Specifications

Part number: CHA8012-99F
Manufacturer: United Monolithic Semiconductors
File Size: 760.02 KB
Datasheet: CHA8012-99F-UnitedMonolithicSemiconductors.pdf
Description: C Band High Power Amplifier

Features

* Broadband performances: 5.2-6GHz
* High output power: +41.5dBm
* High PAE: 43%
* Linear Gain: 22dB
* DC bias: Vd=8Volt @Id=2.1A
* Chip size 5.61x4.51x0.07mm Main Electrical Characteristics Tamb. = +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs)

Applications

* The HPA provides V+ typically 12W of output power on the 5.2 to 6.0GHz frequency band associated with 43% of power added efficiency at 3dB gain compression. The small signal gain is 22dB. The overall power supply is of 8V/2.1A. In Out The circuit is dedicated to defense and space STG1 STG

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CHA8012-99F Band High Power Amplifier United Monolithic Semiconductors

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