CHA8012-99F - C Band High Power Amplifier

United Monolithic Semiconductors

CHA8012-99F Datasheet Preview — Preview of CHA8012-99F PDF

Datasheet Details

Part number	CHA8012-99F
Manufacturer	United Monolithic Semiconductors
File Size	760.02 KB
Description	C Band High Power Amplifier
Datasheet	CHA8012-99F-UnitedMonolithicSemiconductors.pdf

CHA8012-99F Product details

Description

CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications.The HPA provides V+ typically 12W of output power on the 5.2 to 6.0GHz frequency band associated with 43% of power added efficiency at 3dB gain compression.The small signal gain is 22dB.The overall power supply is of 8V/2.1A.In Out The circuit is dedicated to defense and space STG1 STG2 applications and is also well suited for a wide range of microwave and millimeter wave app

Features

Broadband performances: 5.2-6GHz.
High output power: +41.5dBm.
High PAE: 43%.
Linear Gain: 22dB.
DC bias: Vd=8Volt @Id=2.1A.
Chip size 5.61x4.51x0.07mm Main Electrical Characteristics Tamb. = +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs) Symbol Parameter Min Typ Max Unit Freq Frequency range 5.2 6.0 GHz Gain Linear Gain 22 dB P_3dBcomp Output power @ 3dB compression 41.5 dBm PAE_3dB Power Added Efficiency @ 3dB comp. 4.

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Published: Nov 28, 2016 |