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CHA8012-99F Datasheet - United Monolithic Semiconductors

CHA8012-99F C Band High Power Amplifier

CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides V+ typically 12W of output power on the 5.2 to 6.0GHz frequency band associated with 43% of power added efficiency at 3dB gain compression. The small signal gain is 22dB. .

CHA8012-99F Features

* Broadband performances: 5.2-6GHz

* High output power: +41.5dBm

* High PAE: 43%

* Linear Gain: 22dB

* DC bias: Vd=8Volt @Id=2.1A

* Chip size 5.61x4.51x0.07mm Main Electrical Characteristics Tamb.= +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs)

CHA8012-99F-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHA8012-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

760.02 KB

Description:

C band high power amplifier.

CHA8012-99F Distributor

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CHA8012-99F CHA8012-99F Band High Power Amplifier United Monolithic Semiconductors