Part number:
CHA8262-99F
Manufacturer:
United Monolithic Semiconductors
File Size:
1.79 MB
Description:
27.5 - 31.5 ghz 12w hpa.
CHA8262-99F-UnitedMonolithicSemiconductors.pdf
Datasheet Details
Part number:
CHA8262-99F
Manufacturer:
United Monolithic Semiconductors
File Size:
1.79 MB
Description:
27.5 - 31.5 ghz 12w hpa.
CHA8262-99F, 27.5 - 31.5 GHz 12W HPA
The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.
It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation.
The circuit is manufactured on a 0.15µm gate length GaNon-SiC HEMT proces
CHA8262-99F Features
* 27.5
* 31.5GHz Frequency Range
* Linear Gain is 24dB
* Pout = 41dBm @ Pin = 20.5dBm
* PAE = 25% @ Psat
* DC bias: Vd=20V @ Idq=280mA
* ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.5dBm, Tcase = 25°C Main Electrical Characteristics Tcase = +25°C S
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