CHA8262-99F Datasheet - United Monolithic Semiconductors

CHA8262-99F 27.5 - 31.5 GHz 12W HPA

The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth. It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaNon-SiC HEMT proces.

CHA8262-99F Features

* 27.5

* 31.5GHz Frequency Range

* Linear Gain is 24dB

* Pout = 41dBm @ Pin = 20.5dBm

* PAE = 25% @ Psat

* DC bias: Vd=20V @ Idq=280mA

* ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.5dBm, Tcase = 25°C Main Electrical Characteristics Tcase = +25°C S

CHA8262-99F-UnitedMonolithicSemiconductors.pdf

CHA8262-99F Datasheet Preview — Preview of CHA8262-99F PDF

Datasheet Details

Part number:

CHA8262-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.79 MB

Description:

27.5 - 31.5 ghz 12w hpa.

📁 Related Datasheet

CHA8212-99F 25W X-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8252-99F 10W K-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8012-99F C Band High Power Amplifier (United Monolithic Semiconductors)

CHA8054-99F 20W X-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8100 X-band HBT High Power Amplifier (United Monolithic Semiconductors)

CHA8100-99F X-band HBT High Power Amplifier (United Monolithic Semiconductors)

CHA8352-99F 20W Ku-Band High Power Amplifier (United Monolithic Semiconductors)

CHA8610-99F 15W X Band High Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA8262-99F CHA8262-99F 27.5 31.5 GHz 12W HPA United Monolithic Semiconductors

CHA8262-99F Distributor