CHA8262-99F Datasheet (United Monolithic Semiconductors) - 27.5

CHA8262-99F, 27.5 - 31.5 GHz 12W HPA

The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.

It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation.

The circuit is manufactured on a 0.15µm gate length GaNon-SiC HEMT proces

CHA8262-99F Features

* 27.5

* 31.5GHz Frequency Range

* Linear Gain is 24dB

* Pout = 41dBm @ Pin = 20.5dBm

* PAE = 25% @ Psat

* DC bias: Vd=20V @ Idq=280mA

* ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.5dBm, Tcase = 25°C Main Electrical Characteristics Tcase = +25°C S