CHA8262-99F 27.5 - 31.5 GHz 12W HPA

United Monolithic Semiconductors

Description

CHA8262-99F 27.5 - 31.5 GHz 12W HPA GaN Monolithic Microwave IC bare die .
The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.

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Datasheet Specifications

Part number: CHA8262-99F
Manufacturer: United Monolithic Semiconductors
File Size: 1.79 MB
Datasheet: CHA8262-99F-UnitedMonolithicSemiconductors.pdf
Description: 27.5 - 31.5 GHz 12W HPA

Features

* 27.5
* 31.5GHz Frequency Range
* Linear Gain is 24dB
* Pout = 41dBm @ Pin = 20.5dBm
* PAE = 25% @ Psat
* DC bias: Vd=20V @ Idq=280mA
* ACPR > 26dBc @ Pout = 39dBm Vd = +20V, Idq = 280mA, Pin = 20.5dBm, Tcase = 25°C Main Electrical Characteristics Tcase = +25°C S

CHA8262-99F Distributors

📁 Related Datasheet

CHA-20NF CHA-20NM CHA-20NMF CHA-20SF CHA-20SM CHA-20SMF

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CHA8262-99F 27.5 31.5 GHz 12W HPA United Monolithic Semiconductors

United Monolithic Semiconductors CHA8262-99F-like datasheet