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CHA8100 - X-band HBT High Power Amplifier

General Description

The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications.

The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output.

an analogue biasing circuit that makes it less sensitiv

Key Features

  • 11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.

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Datasheet Details

Part number CHA8100
Manufacturer United Monolithic Semiconductors
File Size 251.03 KB
Description X-band HBT High Power Amplifier
Datasheet download datasheet CHA8100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes: • an analogue biasing circuit that makes it less sensitive to spread and chip environment. • an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA The circuit is 100% DC and RF tested on wafer to ensure performance compliance. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.