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CHA8212-99F Datasheet, United Monolithic Semiconductors

CHA8212-99F Datasheet, United Monolithic Semiconductors

CHA8212-99F

datasheet Download (Size : 756.84KB)

CHA8212-99F Datasheet

CHA8212-99F amplifier

25w x-band high power amplifier.

CHA8212-99F

datasheet Download (Size : 756.84KB)

CHA8212-99F Datasheet

CHA8212-99F Features and benefits

CHA8212-99F Features and benefits


* 8.5-11.5 GHz frequency range
* Linear Gain is 34 dB
* 44dBm Pout for +20dBm input power
* Associated PAE is 36% for +20dBm input power
* Associated .

CHA8212-99F Application

CHA8212-99F Application

and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.25µm VG .

CHA8212-99F Description

CHA8212-99F Description

The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB. The ove.

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TAGS

CHA8212-99F
25W
X-Band
High
Power
Amplifier
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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