CHA8212-99F
Description
The CHA8212-99F is a three-stage Ga N
High Power Amplifier in the frequency band
8.5-11.5GHz. This HPA typically provides
25W of output power associated to 36% of
Power Added Efficiency. The small signal gain exhibits more than 30d B. The overall power supply is of 28V/0.84A (quiescent current).
STG1
STG2
STG3
This circuit is a very versatile amplifier for IN
OUT high performance systems.
The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.25µm
VG gate length Ga N HEMT process and is available as a bare die.
Main Features
- 8.5-11.5 GHz frequency range
- Linear Gain is 34 d B
- 44d Bm Pout for +20d Bm input power
- Associated PAE is 36% for +20d Bm input power
- Associated Id is 2.5A for +20d Bm input power
- DC bias: Vd=28Volts @Idq=0.84A
- Chip size 5.63x4.23x0.1mm
Pout @8 d B pression Pae @8 d B pression
Main Electrical Characteristics
Tb.=...
