CHA8212-99F - 25W X-Band High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number: CHA8212-99F
Manufacturer: United Monolithic Semiconductors
File Size: 756.84 KB
Datasheet: CHA8212-99F-UnitedMonolithicSemiconductors.pdf
Description: 25W X-Band High Power Amplifier

CHA8212-99F Product details

Description

The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.5-11.5GHz.This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency.The small signal gain exhibits more than 30dB.The overall power supply is of 28V/0.84A (quiescent current).STG1 STG2 STG3 This circuit is a very versatile amplifier for IN OUT high performance systems.The circuit is dedicated to defence applications and well suited for a wide range of micr.

Features

8.5-11.5 GHz frequency range.
Linear Gain is 34 dB.
44dBm Pout for +20dBm input power.
Associated PAE is 36% for +20dBm input power.
Associated Id is 2.5A for +20dBm input power.
DC bias: Vd=28Volts @Idq=0.84A.
Chip size 5.63x4.23x0.1mm Pout @8 dB compression Pae @8 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=20 dBm) Pout Output Power (Pin=20 dBm) Min.

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25W X-Band High Power Amplifier United Monolithic Semiconductors

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