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CHA8212-99F Datasheet

Manufacturer: United Monolithic Semiconductors
CHA8212-99F datasheet preview

Datasheet Details

Part number CHA8212-99F
Datasheet CHA8212-99F-UnitedMonolithicSemiconductors.pdf
File Size 756.84 KB
Manufacturer United Monolithic Semiconductors
Description 25W X-Band High Power Amplifier
CHA8212-99F page 2 CHA8212-99F page 3

CHA8212-99F Overview

The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB.

CHA8212-99F Key Features

  • 8.5-11.5 GHz frequency range
  • Linear Gain is 34 dB
  • 44dBm Pout for +20dBm input power
  • Associated PAE is 36% for +20dBm input power
  • Associated Id is 2.5A for +20dBm input power
  • DC bias: Vd=28Volts @Idq=0.84A
  • Chip size 5.63x4.23x0.1mm
  • 23 Dec 20
  • Parc Mosaic
  • 10, Avenue du Québec
United Monolithic Semiconductors logo - Manufacturer

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CHA8212-99F Distributor

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