CHA8610-99F - 15W X Band High Power Amplifier

United Monolithic Semiconductors

CHA8610-99F Datasheet Preview — Preview of CHA8610-99F PDF

Datasheet Details

Part number	CHA8610-99F
Manufacturer	United Monolithic Semiconductors
File Size	538.40 KB
Description	15W X Band High Power Amplifier
Datasheet	CHA8610-99F-UnitedMonolithicSemiconductors.pdf

CHA8610-99F Product details

Description

V+ The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 15W of saturated output power and 40% of Power Added Efficiency.It is designed for a wide range of In Out applications, from military to commercial STG1 STG2 communication systems.The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.It is available in chip form.V- Main

Features

Frequency range: 8.5-11GHz.
High output power: 15W.
High PAE: 40%.
Linear Gain: 24dB.
DC bias: Vd=30Volt @Id=0.68A.
Chip size 5.08x2.75x0.1mm.
Available in bare die 45 50 44 45 43 40 Output power (dBm) 42 35 41 30 40 Pout @ Pin=23dBm 25 39 PAE @ Pin=23dBm 20 38 15 37 10 36 5 35 0 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Pout and PAE versus frequency for Pulsed mode Power added efficiency (%) Main Electrical Characteristics (Pul.

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Published: Nov 28, 2016 |