Datasheet4U Logo Datasheet4U.com

CHA8610-99F - 15W X Band High Power Amplifier

General Description

Added Efficiency.

Key Features

  • Frequency range: 8.5-11GHz.
  • High output power: 15W.
  • High PAE: 40%.
  • Linear Gain: 24dB.
  • DC bias: Vd=30Volt @Id=0.68A.
  • Chip size 5.08x2.75x0.1mm.
  • Available in bare die 45 50 44 45 43 40 Output power (dBm) 42 35 41 30 40 Pout @ Pin=23dBm 25 39 PAE @ Pin=23dBm 20 38 15 37 10 36 5 35 0 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Pout and PAE versus frequency for Pulsed mode Power added efficiency (%) Main Electrical Characteristics (Pul.

📥 Download Datasheet

Datasheet Details

Part number CHA8610-99F
Manufacturer United Monolithic Semiconductors
File Size 538.40 KB
Description 15W X Band High Power Amplifier
Datasheet download datasheet CHA8610-99F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SM (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA8611-99F 18W X-Band High Power Amplifier
CHA8012-99F C Band High Power Amplifier
CHA8054-99F 20W X-Band High Power Amplifier
CHA8100 X-band HBT High Power Amplifier
CHA8100-99F X-band HBT High Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA8610-99F 15W X Band High Power Amplifier GaN Monolithic Microwave IC Description V+ The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 15W of saturated output power and 40% of Power Added Efficiency. It is designed for a wide range of In Out applications, from military to commercial STG1 STG2 communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. V- Main Features ■ Frequency range: 8.5-11GHz ■ High output power: 15W ■ High PAE: 40% ■ Linear Gain: 24dB ■ DC bias: Vd=30Volt @Id=0.68A ■ Chip size 5.08x2.75x0.