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UF3C065030T3S - MOSFET

Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

  • w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Typical.

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Datasheet Details

Part number UF3C065030T3S
Manufacturer UnitedSiC
File Size 498.48 KB
Description MOSFET
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DATASHEET UF3C065030T3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C065030T3S Package TO-220-3L Marking UF3C065030T3S 650V-27mW SiC Cascode Rev. C, June 2019 Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
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