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Vishay Intertechnology Electronic Components Datasheet

IRF840PbF Datasheet

Power MOSFET

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www.vishay.com
IRF840, SiHF840
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
63
9.3
32
Single
0.85
D
TO-220AB
G
S
D
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF840PbF
SiHF840-E3
IRF840
SiHF840
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 20
8.0
5.1
32
1.0
510
8.0
13
125
3.5
-55 to +150
300
10
1.1
UNIT
V
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S16-0754-Rev. D, 02-May-16
1
Document Number: 91070
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF840PbF Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 A b
VDS = 50 V, ID = 4.8 A b
500
-
-
V
-
0.78
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.85
4.9
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1300
-
-
310
-
pF
-
120
-
-
VGS = 10 V
ID = 8 A, VDS = 400 V,
see fig. 6 and 13 b
-
-
-
63
-
9.3
nC
-
32
-
14
-
VDD = 250 V, ID = 8 A
Rg = 9.1 , RD = 31, see fig. 10 b
-
23
-
ns
-
49
-
-
20
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Gate Input Resistance
Rg
Drain-Source Body Diode Characteristics
f = 1 MHz, open drain
0.6
-
2.8
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
8.0
A
-
-
32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8 A, VGS = 0 V b
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
Qrr
-
460
970
ns
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b
-
4.2
8.9
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91070
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF840PbF
Description Power MOSFET
Maker Vishay
PDF Download

IRF840PbF Datasheet PDF






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