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SIZ998DT - Dual N-Channel MPSFET

Features

  • TrenchFET® Gen IV power MOSFETs.
  • SkyFET® low-side MOSFET with integrated Schottky.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIZ998DT
Manufacturer Vishay
File Size 261.36 KB
Description Dual N-Channel MPSFET
Datasheet download datasheet SIZ998DT Datasheet

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Full PDF Text Transcription

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www.vishay.com SiZ998DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Channel1 Channel2 VDS (V) 30 30 RDS(on) (Ω) (MAX.) 0.0067 at VGS = 10 V 0.0100 at VGS = 4.5 V 0.0028 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A) a, g Qg (TYP.) 20 5.4 nC 20 60 13.2 nC 60 PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View Ordering Information: SiZ998DT-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFETs • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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