* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
V10150S
132.24 KB
High-voltage trench mos barrier schottky rectifier.
www.vishay.com V10150S, VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A .
📁 Related Datasheet
V10150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V10-A500X Surge Arrester 2-Electrode-Arrester (EPCOS)
V10-H08X Surge Arrester 2-Electrode-Arrester (EPCOS)
V10-H14X Surge Arrester 2-Electrode-Arrester (EPCOS)
V10-H22X Surge Arrester 2-Electrode-Arrester (EPCOS)
V10-H30X Surge Arrester 2-Electrode-Arrester (EPCOS)
V1000LA160B UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
V1000LA160B Line Voltage Operation/ Radial Lead (Littelfuse)
V1000LA160BP Metal-Oxide Varistors (Littelfuse)
V1000LA160CP Radial Leaded Varistors (Littelfuse)
