* Trench MOS Schottky technology generation 2
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of
V10D100C-M3 Datasheet (92.97 KB)
V10D100C-M3
92.97 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V a.
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