V10D100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology generation 2.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

V10D100C-M3 dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V10D100C-M3
Manufacturer	Vishay
File Size	92.97 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V10D100C-M3 Datasheet

Full PDF Text Transcription for V10D100C-M3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for V10D100C-M3. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eS...

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rrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. 100 A 0.60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.

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