* Trench MOS Schottky technology generation 2 Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximu
V10D100C Datasheet (121.02 KB)
V10D100C
121.02 KB
Dual high voltage (trench mos barrier schottky rectifier.
www.vishay.com V10D100C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.
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