V10D100C Datasheet Dual High Voltage (trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V10D100C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.

Datasheet Details

Part number	V10D100C
Manufacturer	Vishay
File Size	121.02 KB
Description	Dual High Voltage (Trench MOS Barrier Schottky Rectifier
Datasheet	V10D100C-Vishay.pdf

Key Features

Trench MOS Schottky technology generation 2 Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 A.

V10D100C Distributor & Price

Compare V10D100C distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
V10D100C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D120C	Trench MOS Barrier Schottky Rectifier
V10D120C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D120CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D170C	Trench MOS Barrier Schottky Rectifier
V10D202C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D45C	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
V10D60C	Dual Trench MOS Barrier Schottky Rectifier
V10DM100C	Trench MOS Barrier Schottky Rectifier