V10D100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay
Download the V10D100CHM3 datasheet PDF.
This datasheet also covers the V10D100C-M3 variant, as both devices belong to the same dual high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.
Key Features
Trench MOS Schottky technology generation 2.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C.
AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3.
Material categorization: For definitions of compliance
please see www. vishay. com/doc?99912.
Full PDF Text Transcription for V10D100CHM3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
V10D100CHM3. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eS...
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rrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. 100 A 0.60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.
V10D100CHM3 Datasheet
