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V10D120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V10D120C-M3
Manufacturer Vishay
File Size 116.23 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10D120C-M3 Datasheet

Full PDF Text Transcription for V10D120C-M3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for V10D120C-M3. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com V10D120C-M3, V10D120CHM3 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A e...

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MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 120 V 100 A 0.64 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.

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