V10D120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay
Download the V10D120CHM3 datasheet PDF.
This datasheet also covers the V10D120C-M3 variant, as both devices belong to the same dual high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.
Key Features
Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C.
AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
Full PDF Text Transcription for V10D120CHM3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
V10D120CHM3. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com V10D120C-M3, V10D120CHM3 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A e...
View more extracted text
MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 120 V 100 A 0.64 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
V10D120CHM3 Datasheet
