V10D202C
V10D202C is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC)
2 Top View
Bottom View
Anode 1
Anode 2
Cathode
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package
2 x 5.0 A 200 V 100 A 0.67 V 175 °C
SMPD (TO-263AC)
Circuit configuration mon cathode
Features
- Trench MOS Schottky technology generation 2 Available
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020,
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