• Part: V10D202C
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 120.47 KB
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Vishay
V10D202C
V10D202C is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) 2 Top View Bottom View Anode 1 Anode 2 Cathode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 200 V 100 A 0.67 V 175 °C SMPD (TO-263AC) Circuit configuration mon cathode Features - Trench MOS Schottky technology generation 2 Available - Very low profile - typical height of 1.7 mm - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF...