* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30M120M PI
V30M120M-E3 Datasheet (95.56 KB)
V30M120M-E3
95.56 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A T.
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