logo

V30M120M-E3 Datasheet, Vishay

V30M120M-E3 rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.

V30M120M-E3 Avg. rating / M : 1.0 rating-11

datasheet Download

V30M120M-E3 Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .

Application

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse bat.

Image gallery

V30M120M-E3 Page 1 V30M120M-E3 Page 2 V30M120M-E3 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts