V30M120M-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Part: V30M120M-E3
- Manufacturer: Vishay (official site)
- Size: 95.56 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V30M120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30M120C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30M120CHM3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30M100M-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
V30M120M-E3 Description
V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-220AB.
V30M120M-E3 Applications
- RoHS-pliant, mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD