• Part: V30M120C-M3
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 146.49 KB
Download V30M120C-M3 Datasheet PDF
Vishay
V30M120C-M3
V30M120C-M3 is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Solder dip 275 °C max. 10 s, per JESD 22-B106 - AEC-Q101 qualified - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 175 °C TO-220AB, TO-262AA Diode variations Dual mon cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding pound meets UL 94 V-0 flammability rating...