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V30M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V30M120C-M3
Manufacturer Vishay
File Size 146.49 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30M120C-M3 Datasheet

Overview

www.vishay.com V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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