V30M120M-E3 Description
V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-220AB.
V30M120M-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
V30M120M-E3 Applications
- RoHS-pliant, mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD