• Part: V30M120M-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 95.56 KB
Download V30M120M-E3 Datasheet PDF
Vishay
V30M120M-E3
V30M120M-E3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Solder dip 275 °C max. 10 s, per JESD 22-B106 - Material categorization: for definitions of pliance please see .vishay./doc?99912 V30M120M PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A (TA = 125 °C) TJ max. Package 2 x 15 A 120 V 120 A 0.70 V 175 °C TO-220AB Diode variations mon cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro HS-pliant, mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and...