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V30M100M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V30M100M-E3
Manufacturer Vishay
File Size 95.38 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30M100M-E3 Datasheet

Overview

www.vishay.com V30M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V30M100M PIN 1 PIN 3 PIN 2 CASE.

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