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V30M100M-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 5 A
TMBS ®
TO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
V30M100M
PIN 1 PIN 3
PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A (TA = 125 °C) TJ max. Package
2 x 15 A 100 V 120 A 0.70 V 175 °C
TO-220AB
Diode variations
Common cathode
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
V30M100M-E3 Datasheet
