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V30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V30M120C
Manufacturer Vishay
File Size 139.65 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30M120C Datasheet

Overview

www.vishay.com V30M120C, VI30M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V30M120C PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30M120C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.

Package 2 x 15 A 120 V 150 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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