Datasheet4U Logo Datasheet4U.com

V30M120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the V30M120CHM3, a member of the V30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier family.

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – V30M120CHM3

Datasheet Details

Part number V30M120CHM3
Manufacturer Vishay
File Size 146.49 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30M120CHM3 Datasheet
Additional preview pages of the V30M120CHM3 datasheet.

📁 Similar Datasheet

  • V30MLA0603 - Multilayer Transient Voltage Surge Suppressors (Littelfuse)
  • V30MLA0805L - Multilayer Transient Voltage Surge Suppressors (Littelfuse)
  • V30MLA1210 - Multilayer Transient Voltage Surge Suppressors (Littelfuse)
  • V30MLA1210L - Multilayer Transient Voltage Surge Suppressors (Littelfuse)
  • V300A12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
  • V300B12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
  • V300C12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
  • V300LA10 - Line Voltage Operation/ Radial Lead (Littelfuse)
  • V300LA10 - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
  • V300LA10CP - Radial Leaded Varistors (Littelfuse)
Other Datasheets by Vishay
  • V30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30M120M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • V30M100M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • V30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • V30100PW-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30M120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30M120C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Published: |