Datasheet4U Logo Datasheet4U.com

V8P8 - Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 ADDIT.

📥 Download Datasheet

Datasheet preview – V8P8

Datasheet Details

Part number V8P8
Manufacturer Vishay
File Size 98.44 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V8P8 Datasheet
Additional preview pages of the V8P8 datasheet.

📁 Similar Datasheet

Other Datasheets by Vishay
  • V8P10 - Trench MOS Barrier Schottky Rectifier
  • V8P12 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
  • V8P15 - Trench MOS Barrier Schottky Rectifier
  • V8P20 - Trench MOS Barrier Schottky Rectifier
  • V8P45 - Trench MOS Barrier Schottky Rectifier
  • V8P6 - Trench MOS Barrier Schottky Rectifier
  • V8PA10 - Trench MOS Barrier Schottky Rectifier
  • V8PA12 - Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V8P8 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.42 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
Published: |