900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

2N6660JANTX Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
Configuration
TO-205AD
(TO-39)
S
1
60
3
Single
2
G
3
D
Top View
ORDERING INFORMATION
PART
2N6660
2N6660-2
2N6660JANTX
2N6660JANTXV
PACKAGE
TO-205AD
(TO-39)
FEATURES
• Military Qualified
• Low On-Resistence: 1.3
• Low Threshold: 1.7 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 8 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
DESCRIPTION/DSCC
PART NUMBER
Commercial
Commercial, Lead (Pb)-free
wwwS.veiesh-2ayF.lcowomD/odcoucm?e6n7t 884
JANTX2N6660 (std Au leads)
JANTX2N6660 (with solder)
JANTX2N6660P (with PIND)
JANTXV2N6660 (std Au leads)
JANTXV2N6660P (with PIND)
VISHAY ORDERING
PART NUMBER
2N6660
2N6660-E3
2N6660-2
2N6660JTX02
2N6660JTXL02
2N6660JTXP02
2N6660JTXV02
2N6660JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Thermal Resistance, Junction-to-Ambientb
RthJA
Thermal Resistance, Junction-to-Case
RthJC
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
LIMIT
60
± 20
0.99
0.62
3
6.25
0.725
170
20
- 55 to 150
UNIT
V
A
W
°C/W
°C
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

2N6660JANTX Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltage
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 0 V, ID = 10 μA
VDS = VGS, ID = 1 mA
TC = - 55 °C
TC = 125 °C
VGS = ± 20 V
VDS = 0 V
TC = 125 °C
VGS = 0 V
VDS = 48 V
TC = 125 °C
VGS = 10 V
VDS = 10 V
VGS = 5 V
ID = 0.3 A
VGS = 10 V
ID = 1 A
TC = 125 °C
VDS = 7.5 V, ID = 0.525 A
IS = 0.99 A, VGS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Switchingc
Ciss
Coss
Crss
Cds
VGS = 0 V
VDS = 25 V, f = 1 MHz
Turn-On Time
Turn-Off Time
tON VDD = 25 V, RL = 23
tOFF ID 1 A, VGEN = 10 V, Rg = 25
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
MIN.
60
0.8
-
0.3
-
-
-
-
-
-
-
-
170
0.7
-
-
-
-
-
-
LIMITS
TYP.a
75
1.7
-
-
-
-
-
-
2
2
1.3
2.4
350
0.8
35
25
7
30
8
8.5
MAX. UNIT
-
2
2.5
-
± 100
± 500
1
100
-
5
3
5.6
-
1.6
V
nA
μA
A
mS
V
50
40
pF
10
-
10
ns
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 2N6660JANTX
Description N-Channel MOSFET
Maker Vishay Siliconix
PDF Download

2N6660JANTX Datasheet PDF






Similar Datasheet

1 2N6660JANTX N-Channel MOSFET
Vishay Siliconix
2 2N6660JANTXV N-Channel MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy