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SiHFB11N50A Datasheet Power MOSFET

Manufacturer: Vishay

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Overview

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.

Key Features

  • 500 0.52.
  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness.
  • Fully Characterized Capacitance and Avalanche Voltage and current.
  • Lead (Pb)-free Available Available RoHS.

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