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Vishay Intertechnology Electronic Components Datasheet

SiHFB16N60L Datasheet

Power MOSFET

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IRFB16N60L, SiHFB16N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
600
VGS = 10 V
100
30
46
Single
0.385
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
TO-220
IRFB16N60LPbF
SiHFB16N60L-E3
IRFB16N60L
SiHFB16N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS =16 A, dV/dt = 10 V/ns (see fig. 12a).
c. ISD 16 A, dI/dt 340 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91097
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
LIMIT
600
± 30
16
10
60
2.5
310
16
31
310
10
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFB16N60L Datasheet

Power MOSFET

No Preview Available !

IRFB16N60L, SiHFB16N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.4
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
www.DataSheet4U.com
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.0 Ab
VDS = 50 V, ID = 9.0 A
600 -
-V
- 0.39 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 µA
- - 2.0 mA
- 0.385 0.460 Ω
8.3 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 0 V to 480 Vc
- 2720 -
- 26 -
- 20 -
- 120 -
- 100 -
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
ID = 16 A, VDS = 480 V,
see fig. 7 and 15b
VGS = 10 V
VDD = 300 V, ID = 16 A,
RG = 1.8 Ω,
see fig. 11a and 11bb
-
-
-
-
-
-
-
- 100
- 30 nC
- 46
20 -
44 -
ns
28 -
5.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 16
A
- - 60
Body Diode Voltage
VSD
TJ = 25 °C, IS = 16 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 16 A,
TJ = 125 °C, dI/dt = 100 A/µsb
- 130 200
ns
- 240 360
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IS = 16 A,
TJ = 125 °C, dI/dt = 100 A/µsb
- 450 670
nC
- 1080 1620
Body Diode Reverse Recovery Current
Forward Turn-On Time
IRRM
ton
TJ = 25 °C
-
5.8 8.7
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss whil VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91097
S-Pending-Rev. A, 03-Jun-08


Part Number SiHFB16N60L
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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