SiHFB17N50L Description
IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0.28 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel.
SiHFB17N50L Key Features
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low trr and Soft Diode Recovery
- pliant to RoHS Directive 2002/95/EC