SiHFB17N60K Description
IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 99 32 47 Single.
SiHFB17N60K Key Features
- Smaller TO-220 Package
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Lead (Pb)-free Available