SiHFB18N50K Description
IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration .. VGS = 10 V 120 34 54 Single.
SiHFB18N50K Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low RDS(on)
- Lead (Pb)-free Available