SiHFB20N50K Description
IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 110 33 54 Single 0.21.
SiHFB20N50K Key Features
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche, and dynamic dV/dt Available ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Low RDS(on)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- This datasheet provides information about parts that are